SiC Power Semiconductor Industry 2019 Analysis with Focus on Opportunities, Comprehensive Plans, Growth Potential, Future Estimations, Competitive Landscape and Statistics

SiC Power Semiconductor Market Research Report, by Device (Discrete Devices, Bare Die Device), by Wafer Size (2-inch, 4-inch, 6-inch & above), End Users (Telecommunication, Energy and Power, Power Electronics), by Application — Global Forecast till 2023

Key players
The prominent players in the market of SiC power semiconductor are Infineon Technologies AG (Germany), Cree Inc. (Wolfspeed) (USA), Rohm Semiconductor (Japan), STMicroelectronics N.V. (Switzerland), Fuji Electric Co., Ltd. (Japan), On Semiconductor Corporation (US), GENERAL ELECTRIC(US), United Silicon Carbide, Inc. (US), GeneSiC Semiconductor, Inc. (US), Renesas Electronics Corporation (Japan), Monolith Semiconductor Inc. (US), Ascatron AB (Sweden), Pilegrowth Tech S.R.L. (Italy), Graphensic ( Sweden).

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Market Highlights
Silicon Carbide (SC), also known as carborundum, is a unique compound of carbon and silicon and is one of the hardest available materials. Silicon carbide has various advantages over Si (Silicon). SiC provides higher breakdown electric field strength, higher band gap and superior thermal conductivity. The ability of SiC semiconductor to perform at high temperature and high voltage & power has resulted in its demand for motor drives and RF and cellular base stations. Another major factor driving the SiC power semiconductor market is the rise in the air pollution due to various types of combustible fuels such as petroleum, diesel, and others for generating power. Therefore, several countries are focusing to rely on renewable source of energy such as solar and wind. The solar panels use SiC devices that tend to drive the SiC power semiconductor market. Whereas, China is the largest manufacturer of electric vehicle contributing to the demand for SiC semiconductors from the region.

Competitive Analysis
SiC power semiconductor market is witnessing a major growth trend due to increasing demand for semiconductors in various applications in telecommunications, electric vehicles, power generation, and others.
In August 2018, Hitachi Ltd. announced the development of an energy power saving SiC semiconductor named TED-MOS that can be used in electric vehicles (EV) for saving energy.

Regional Analysis
The global SiC Power Semiconductor Market is estimated to grow at a significant rate during the forecast period from 2018 to 2023. The geographical analysis of SiC semiconductor market is covered for North America, Europe, Asia-Pacific, and the rest of the world. Asia-Pacific region is expected to dominate the market due to the presence of various key players in the countries such as Japan, South Korea, China, and others. Various key players are investing in Asia-Pacific in search of various opportunities in the emerging economies in the region. Increasing RF devices and cellular base stations in the Asia-Pacific region is also driving the market as the consumer market is increasing for cellular devices. North America is expected to be the second dominating region due to the presence of various research centers and concentration of key players in the region.

Report Overview
This MRFR report on SiC power semiconductor provides a detailed assessment of the different factors shaping the market growth. An outlook for device types, wafer size, and application has also been presented as a part of the report. The study finds that telecommunication, energy & power, automotive and others are the primary end users of SiC power semiconductors. Major SiC power semiconductor devices covered in the report include SiC discrete devices and SiC bare die devices. Risk factors, opportunities, market drivers, and growth trends have been thoroughly discussed in the report. All the sub-markets included in the report are profiled under the regions of North America, Asia Pacific, Europe, and the Rest of the World along with country-level market sizes.

Research Methodology
MRFR's research process involves extensive data mining from both primary as well as secondary sources. Information and statistics acquired from secondary sources such as company annual reports, government websites, statistic agencies, and paid database are combined with firsthand data gathered from key level market participants. The usage of top-down and bottom-up approaches ensure accurate forecasts regarding the size of the market and sub-markets.

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Intended Audience
• Electronic design automation (EDA) and design tool vendors IT & telecommunication industry
• Original equipment manufacturers (OEMs)
• Integrated device manufacturers (IDMs)
• Original design manufacturers (ODMs)
• Automotive ODM and OEM technology solution providers
• Research institutes and organizations
• Technology investors
• Governments and other regulatory bodies
• Suppliers and distributors
• Technology, service, and solution providers

1 Executive Summary
2 Scope Of The Report
2.1 Market Definition
2.2 Scope Of The Study
2.2.1 Research Objectives
2.2.2 Assumptions & Limitations
2.3 Markets Structure
3 Market Research Methodology
3.1 Research Process
3.2 Secondary Research
3.3 Primary Research
3.4 Forecast Model
4 Market Landscape

Table 1 Global SiC Power Semiconductor Market, By Region, 2018–2023
Table 2 North America: SiC Power Semiconductor Market, By Country, 2018–2023
Table 3 Europe: SiC Power Semiconductor Market, By Country, 2018–2023
Table 4 Asia-Pacific: SiC Power Semiconductor Market, By Country, 2018–2023
Table 5 Middle East & Africa: SiC Power Semiconductor Market, By Country, 2018–2023

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FIGURE 1 Global SiC Power Semiconductor Segmentation
FIGURE 2 Forecast Methodology
FIGURE 3 Porter’s Five Forces Analysis Of Global SiC Power Semiconductor
FIGURE 4 Value Chain Of Global SiC Power Semiconductor
FIGURE 5 Share Of Global SiC Power Semiconductor In 2017, By Country (In %)

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Release ID: 491471