-- Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials.
The worldwide market for SiC and GaN Power Devices is expected to grow at a CAGR of roughly 32.8% over the next five years, will reach 1780 million US$ in 2024, from 320 million US$ in 2019, according to a new study.
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Infineon is the largest production Cmpany for SiC and GaN Power Devices, with a production value market share nearly 49.01% in 2016.
Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices Devices used in industry including Consumer Electronics, Automotive and Transportation, Industrial Use and Others. Report data showed that 34.05% of the SiC and GaN Power Devices market demand in Industrial Use, 28.76% in Consumer Electronics in 2016.
There are two kinds of SiC and GaN Power Devices, which are SiC and GaN Power Devices. SiC Power Devices is important in the SiC and GaN Power Devices, with a production revenue market share nearly 91.40% in 2016.
Briefly speaking, in the next few years, SiC and GaN Power Devices industry will be a rapid development industry. Sales of SiC and GaN Power Devices have brought a lot of opportunities, there will more companies enter into this industry, especially in developing countries.
This report focuses on the SiC and GaN Power Devices in global market, especially in North America, Europe and Asia-Pacific, South America, Middle East and Africa. This report categorizes the market based on manufacturers, regions, type and application.
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At company level, this report focuses on the production capacity, ex-factory price, and revenue and market share for each manufacturer covered in this report.
Besides, the report also covers segment data, including: type segment, industry segment, channel segment etc. cover different segment market size, both volume and value. Also cover different industries clients’ information, which is very important for the manufacturers.
Market Segment by Manufacturers, this report covers
Infineon
Rohm
Mitsubishi
STMicro
Fuji
Toshiba
Microsemi
United Silicon Carbide Inc.
GeneSic
Efficient Power Conversion (EPC)
GaN Systems
VisIC Technologies LTD
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SiC and GaN Power Devices Market Segment by Type covers
GaN
SiC
SiC and GaN Power Devices Market Segment by Applications, can be divided into
Consumer Electronics
Automotive and Transportation
Industrial Use
Others
Market Segment by Regions, regional analysis covers
North America (United States, Canada and Mexico)
Europe (Germany, France, UK, Russia and Italy)
Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
South America (Brazil, Argentina, Colombia etc.)
Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe SiC and GaN Power Devices product scope, market overview, market opportunities, market driving force and market risks.
Chapter 2, to profile the top manufacturers of SiC and GaN Power Devices, with price, sales, revenue and global market share of SiC and GaN Power Devices in 2017 and 2018.
Chapter 3, the SiC and GaN Power Devices competitive situation, sales, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the SiC and GaN Power Devices breakdown data are shown at the regional level, to show the sales, revenue and growth by regions, from 2014 to 2019.
Chapter 5, 6, 7, 8 and 9, to break the sales data at the country level, with sales, revenue and market share for key countries in the world, from 2014 to 2019.
Chapter 10 and 11, to segment the sales by type and application, with sales market share and growth rate by type, application, from 2014 to 2019.
Chapter 12, SiC and GaN Power Devices market forecast, by regions, type and application, with sales and revenue, from 2019 to 2024.
Chapter 13, 14 and 15, to describe SiC and GaN Power Devices sales channel, distributors, customers, research findings and conclusion, appendix and data source.
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Part of List of Tables and Figures:
Table Product Specifications of SiC and GaN Power Devices
Figure Global Sales Market Share of SiC and GaN Power Devices by Types in 2018
Table SiC and GaN Power Devices Types for Major Manufacturers
Figure Single-phase SiC and GaN Power Devices Picture
Figure Three-phase SiC and GaN Power Devices Picture
Figure SiC and GaN Power Devices Sales Market Share by Applications in 2018
Figure Residential application Picture
Figure Commercial application Picture
Figure Industrial application Picture
Table Siemens Basic Information, Manufacturing Base and Competitors
Table Siemens SiC and GaN Power Devices Type and Applications
Table Siemens SiC and GaN Power Devices Sales, Price, Revenue, Gross Margin and Market Share (2017-2018)
Table Global SiC and GaN Power Devices Sales Forecast by Type (2019-2024)
Table Global SiC and GaN Power Devices Market Share Forecast by Type (2019-2024)
Table Global SiC and GaN Power Devices Sales Forecast by Application (2019-2024)
Table Global SiC and GaN Power Devices Market Share Forecast by Application (2019-2024)
Table Distributors/Traders/ Dealers List
Other Trending PR :
Flexible Electronics Market Size, Growth, Share, Trends, Scrutiny-Global Industry by Applications (Consumer Electronics, Automotive, Healthcare, Industrial) and Forecast 2018-2023 @ http://www.reuters.com/brandfeatures/venture-capital/article?id=57787
This report gives overview of “Flexible Electronics Market” in global region. Also elaborate Company Competition, Market demand, Regional Forecast, Marketing and Price and also new investment feasibility analysis is included in the report.
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