Next Generation Memory 2017 Global Market Expected to Grow at CAGR 66.63% and Forecast to 2021

Pune India, April 10, 2017 /MarketersMedia/ --

The analysts forecast the global next generation memory market to grow at a CAGR of 66.63% during the period 2017-2021.

Next-generation memories include the latest developments in the memory industry such as ferroelectric random-access memory (FeRAM), phase-change memory (PCM), resistive random-access memory (ReRAM), and magnetic random-access memory (MRAM). The MRAM segment includes spin-transfer torque random-access memory (STT-MRAM). Next-generation memories are usually nonvolatile in nature.

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Covered in this report

The report covers the present scenario and the growth prospects of the global next generation memory market for 2017-2021. To calculate the market size, the report considers revenue generated from the sales of nonvolatile memory (NVM) technologies implemented in the different application segments.

The market is divided into the following segments based on geography:
• Americas
• APAC
• EMEA

The report, Global Next Generation Memory Market 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

Key vendors
• Cypress Semiconductor
• Fujitsu
• Intel
• IBM
• Micron Technology
• ROHM Semiconductor
• Samsung Electronics
• Texas Instruments
• Toshiba

Other prominent vendors
• Adesto Technologies
• Crossbar
• Everspin Technologies

Market driver
• Growing demand for FeRAM in automotive applications.
• For a full, detailed list, view our report

Market challenge
• Cyclical nature of consumer electronics industry.
• For a full, detailed list, view our report

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Market trend
• Growing emergence of new FeRAM design using CMOS processes.
• For a full, detailed list, view our report

Key questions answered in this report
• What will the market size be in 2021 and what will the growth rate be?
• What are the key market trends?
• What is driving this market?
• What are the challenges to market growth?
• Who are the key vendors in this market space?
• What are the market opportunities and threats faced by the key vendors?
• What are the strengths and weaknesses of the key vendors?

Table Of Contents – Major Key Points

PART 01: Executive summary

PART 02: Scope of the report

PART 03: Research Methodology

PART 04: Introduction
• Key market highlights

PART 05: Emerging memory technologies

PART 06: Supply chain

PART 07: Market landscape
• Market overview
• Market size and forecast
• Five forces analysis

PART 08: Market segmentation by product
• Global next-generation memory market by product
• Global next-generation memory market by FeRAM
• Global next-generation memory market by MRAM
• Global next-generation memory market by ReRAM
• Global next-generation memory market by PCM

PART 09: Market segmentation by application
• Global next-generation memory market by application
• Global next-generation memory market by cellphones
• Global next-generation memory market by enterprise storages
• Global next-generation memory market by industrial and automotive sectors
• Global next-generation memory market by mass storages
• Global next-generation memory market by smartcards and embedded MCUs

PART 10: Geographical segmentation
• Next-generation memory market in Americas
• Next-generation memory market in APAC
• Next-generation memory market in EMEA

PART 11: Decision framework

PART 12: Drivers and challenges
• Market drivers
• Impact of drivers on key customer segments
• Market challenges
• Impact of challenges on key customer segments

Continued…….

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