GaN Semiconductor Devices Market opportunities, Business prospects, Trends, growth, Analysis and Forecast to 2022

Global GaN Semiconductor Device Market, by Devices (Rectifier, Transistor, Diodes, Power IC), by Application (Medical, Automotive, Aerospace, Defence, Consumer electronics), by Type (Power semiconductor, Opto semiconductor) - Forecast 2022

Market Scenario

The major growth driver of GaN Semiconductor Devices Market includes growing demand of radio-frequency in semiconductor market, growing market of electric vehicles and photovoltaic inverters, and growing market of consumer electronics especially of LED based lighting and displays among others.
The report gives the clear picture of current market scenario which includes historical and projected market size in terms of value and volume, technological advancement, macro economical and governing factors in the market. The report provides details information and strategies of the top key players in the industry. The report also gives a broad study of the different market segments and regions.

However, high initial cost is one of the factors which are hindering the growth of GaN Semiconductor Devices Market.

Major Key Players

Some of the major players in Global GaN Semiconductor Devices Market include
RF Micro Devices Incorporated (U.S.),
Fujitsu Ltd.(Japan),
Toshiba Corp. (Japan),
Texas Instruments Inc. (U.S.),
Cree Incorporated (U.S.),
Aixtron SE (Germany),
Mitsubishi Chemical Corporation (Japan), Koninklijke Philips N.V. (Netherlands), GaN Systems Inc. (Canada), Epigan NV (Belgium)

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Segments
Global GaN Semiconductor Devices Market can be segmented as follows:
Segmentation by Type: opto semiconductor and power semiconductor.
Segmentation by Devices: transistors, diodes, rectifier, power ICs, amplifier and switching system. Segmentation by Applications: consumer electronics, automotive, medical, power conditioner, and military, aerospace & defence among others.

Industry News:

- Fujitsu Ltd. has announced on 25th January 2016 about its new GaN high electron mobility transistor. This is developed to be used at high capacity wireless network with coverage over wide range of network.
- Cree Inc. has signed an agreement with Avnet Inc. in July 2016 that expands the distribution of Cree’s LED components which also includes high power chips and LED modules in the American region.

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The report for GaN Semiconductor Devices Market of Market Research Future comprises of extensive primary research along with the detailed analysis of qualitative as well as quantitative aspects by various industry experts, key opinion leaders to gain the deeper insight of the market and industry performance.
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